nte102 (pnp) & nte103 (npn) germanium complementary transistors power output, driver description: the nte102 (pnp) and nte103 (npn) are germanium complementary transistors designed for me- dium?speed saturated switching applications. features: low collector?emitter saturation voltage: v ce(sat) = 200mv max @ i c = 24ma high emitter?base breakdown voltage: v (br)ebo = 12v min @ i e = 20 a absolute maximum ratings: collector?base voltage, v cbo 25v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . collector?emitter voltage, v ces 24v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter?base voltage, v ebo 12v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . continuous collector current, i c 150ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . emitter current, i e 100ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total device dissipation (t a = +25 c), p d 150mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate above +25 2mw/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . total device dissipation (t c = +25 c), p d 300mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . derate above +25 4mw/ c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature range, t j ?65 to +100 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage junction temperature range, t stg ?65 to +100 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . electrical characteristics: (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector?base breakdown voltage v (br)cbo i c = 20 a, i e = 0 25 ? ? v emitter?base breakdown voltage v (br)ebo i e = 20 a, i c = 0 12 ? ? v punch?through voltage v pt v ebfl = 1v, note 1 24 ? ? v collector cutoff current i cbo v cb = 12v, i e = 0 ? 0.8 5.0 a v cb = 12v, i e = 0, t a = +80 c ? 20 90 a emitter cutoff current i ebo v eb = 2.5v, i c = 0 ? 0.5 2.5 a note 1. v pt is determined by measuring the emitter?base floating potential v ebfl , using a voltmeter with 11m ? minimum input impedance. the collector?base voltage, v cb , is increased until v ebfl = 1v; this value of v cb = (v pt + 1).
electrical characteristics (cont?d): (t a = +25 c unless otherwise specified) parameter symbol test conditions min typ max unit on characteristics dc current gain h fe v ce = 150mv, i c = 12ma 30 80 ? v ce = 200mv, i c = 24ma 24 90 ? collector ? emitter saturation voltage v ce(sat) i c = 12ma, i b = 0.4ma ? 0.09 0.15 v i c = 24ma, i b = 1ma ? 0.09 0.20 v base ? emitter voltage v be i c = 12ma, i b = 0.4ma ? 0.27 0.35 v i c = 24ma, i b = 1ma ? 0.30 0.40 v small?signal characteristics alpha cutoff frequency f hfb v cb = 6v, i e = 1ma 4 25 ? mhz output capacitance c ob v cb = 6v, i e = 1ma, f = 1mhz ? 8 20 pf input impedance h ie v ce = 6v, i e = 1ma, f = 1mhz ? 3.6 ? k ? voltage feedback ratio h re ? 8 ? x 10 ? 4 small ? signal current gain h fe ? 135 ? output admittance h oe ? 50 ? mhos switching characteristics delay time t d ? 0.07 ? s rise time t r ? 0.12 ? s storage time t s ? 0.20 ? s fall time t f ? 0.10 ? s stored base charge q sb ? 300 1400 pc 45 .031 (.793) .019 (0.5) dia emitter base collector .352 (8.95) dia max .320 (98.13) dia max .250 (6.35) max 1.500 (38.1) min
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